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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
DESCRIPTION With TO-3PML package High breakdown voltage High reliability High speed APPLICATIONS Color TV horizontal deflection output. Color display horizontal deflection output.
PINNING PIN 1 2 3 Base Collector DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER
TOR NDU ICO E SEM ANG INCH
Emitter CONDITIONS VALUE 1500 800 6 6 20 3.0 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Open collector
Fig.1 simplified outline (TO-3PML) and symbol
UNIT V V V A A
PC
Collector power dissipation TC=25ae 60 150 -55~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1 A IC=5A;IB=1 A IC=100mA;IB=0 VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 8 5 800 1 10 1 |I MIN TYP. MAX 5 1.5 UNIT V V V mA A mA
SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 tf
NDU ICO E SEM ANG INCH
Fall time IC=4A;RL=50| ; IB1=0.8A IB2=-1.6AVCC=200V
TOR
10 0.1 0.3 |I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1885
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
TOR NDU ICO E SEM ANG INCH
4


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